ՀՀ ԳԱԱ Տեղեկագիր: Ֆիզիկա = Proceedings of the NAS RA: Physics

Эффект резистивного переключения в структурах металл–оксид– металл с оксидным слоем ZnO:Li

Игитян, А. С. (2016) Эффект резистивного переключения в структурах металл–оксид– металл с оксидным слоем ZnO:Li. ՀՀ ԳԱԱ Տեղեկագիր. Ֆիզիկա, 51 (2). pp. 227-234. ISSN 0002-3035

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    Abstract

    The resistive switching effect in metal–oxide–metal (MOM) structures have been investigated, where the 10%Li-doped ZnO layer was used as an oxide layer, as well as Pt and 20% fluorine doped SnO2 (SnO2:F) were used as bottom electrodes. Current–voltage (I–V) and switching (I–t) characteristics of Ag/ZnO:Li/Pt and Ag/ZnO:Li/SnO2:F structures were investigated. Unipolar resistive switching is detected in the structures with Pt electrode, and bipolar memory effect is found in case of using the transparent conductive SnO2:F as an electrode instead of Pt.

    Item Type: Article
    Additional Information: ZnO:Li օքսիդային շերտով մետաղ–օքսիդ–մետաղ կառուցվածքներում ռեզիստիվ փոխարկման էֆեկտը; Resistive switching effect in metal–oxide–metal structures with ZnO:Li oxide layer
    Uncontrolled Keywords: Իգիտյան Ա. Ս., Igityan A. S.
    Subjects: Q Science > QC Physics > Radiation physics (General)
    Q Science > QC Physics > Solid State Physics
    Divisions: UNSPECIFIED
    Depositing User: Professor Vladimir Aroutiounian
    Date Deposited: 09 Jun 2016 15:55
    Last Modified: 30 Sep 2019 06:21
    URI: http://physics.asj-oa.am/id/eprint/3564

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